Volume 10, No. 3, issue 8

Diyala Journal of Engineering Sciences DJES

Volume 10, No. 3, Pages: 86-95, September 2017

(Received: 4/9/2016; Accepted: 22/11/2016)

Study Of Optical Gain In Algaas Quantum Dot Photodetector

Hayder T. Assafli

Laser and Optoelectronics Eng. Dept., University of Technology

DOI: https://dx.doi.org/10.24237/djes.2017.10308

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Abstract

The Quantum Dot Infrared Photo Detectors (QDIPs) become the leading technology in semiconductor detectors. This attraction comes from the properties of these devices that overpowers over the currently available detectors like Quantum Well Infrared Photo Detectors (QWIPs). In this paper, different Z-length dimensions are used to investigate the behavior of energy levels inside the quantum dots. The Z-length is also applied to investigate the shift of the operating wavelength and adjust the quantum dot performance by multiband Schroedinger-Poisson simulation. The generated electrons in the detection process are one of the most important properties of these dots. A software program is used to simulate the wave function, energy state, and absorption for different Z-dimensions. Results showed that the bandgap decreases and the absorption response shifts with increasing Z-dimension.

Keyword: Quantum-Dot, Infrared, Photodetector.

This article is an open access article distributed under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.